RSD100N10TL Rohm Semiconductor

Description: MOSFET N-CH 100V 10A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.