RSD200N05TL Rohm Semiconductor
auf Bestellung 2268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 354+ | 0.44 EUR |
| 358+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.38 EUR |
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Technische Details RSD200N05TL Rohm Semiconductor
Description: MOSFET N-CH 45V 20A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V.
Weitere Produktangebote RSD200N05TL nach Preis ab 0.79 EUR bis 1.44 EUR
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RSD200N05TL | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH Si 45V 20A 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
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RSD200N05TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 20A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
auf Bestellung 2330 Stücke: Lieferzeit 10-14 Tag (e) |
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RSD200N05TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 20A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
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RSD200N05TL | Hersteller : ROHM Semiconductor |
MOSFET 4V Drive Nch MOSFET Drive Nch |
Produkt ist nicht verfügbar |