RSD200N05TL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 354+ | 0.5 EUR |
| 358+ | 0.49 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.45 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
354 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details RSD200N05TL Rohm Semiconductor
Description: MOSFET N-CH 45V 20A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V, Power Dissipation (Max): 20W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V.
Weitere Produktangebote RSD200N05TL nach Preis ab 0.76 EUR bis 1.71 EUR
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RSD200N05TL | Rohm Semiconductor |
 Trans MOSFET N-CH Si 45V 20A 3-Pin(2+Tab) CPT T/R |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
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RSD200N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 20A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
auf Bestellung 2330 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RSD200N05TL |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 45V 20A 3-Pin(2+Tab) CPT T/R
Trans MOSFET N-CH Si 45V 20A 3-Pin(2+Tab) CPT T/R
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 158+ | 1.13 EUR |
| 250+ | 1.07 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.95 EUR |
| RSD200N05TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Description: MOSFET N-CH 45V 20A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 15+ | 1.42 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.76 EUR |