RSJ301N10FRATL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 100V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.92 EUR |
| 2000+ | 1.79 EUR |
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Technische Details RSJ301N10FRATL Rohm Semiconductor
Description: MOSFET N-CH 100V 30A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V, Power Dissipation (Max): 50W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote RSJ301N10FRATL nach Preis ab 1.85 EUR bis 5.63 EUR
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RSJ301N10FRATL | Hersteller : ROHM Semiconductor |
MOSFETs Nch 100V Vds 30A 0.036Rds(on) 60Qg |
auf Bestellung 677 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ301N10FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 30A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3009 Stücke: Lieferzeit 10-14 Tag (e) |
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