RSQ015P10HZGTR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 100V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
| 9000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RSQ015P10HZGTR Rohm Semiconductor
Description: MOSFET P-CH 100V 1.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RSQ015P10HZGTR nach Preis ab 0.44 EUR bis 1.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RSQ015P10HZGTR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 100V 1.5A 6-Pin TSMT T/R Automotive AEC-Q101 |
auf Bestellung 5922 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
RSQ015P10HZGTR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 100V 1.5A 6-Pin TSMT T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
RSQ015P10HZGTR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 100V 1.5A 6-Pin TSMT T/R Automotive AEC-Q101 |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
RSQ015P10HZGTR | Hersteller : ROHM Semiconductor |
MOSFETs Pch -100V -1.5A Small Signal MOSFET for Automotive. RSQ015P10HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications. |
auf Bestellung 5194 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
RSQ015P10HZGTR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 1.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17270 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
RSQ015P10HZGTR | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 100V 1.5A 6-Pin TSMT T/R Automotive AEC-Q101 |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
| RSQ015P10HZGTR | Hersteller : ROHM SEMICONDUCTOR |
RSQ015P10HZGTR SMD P channel transistors |
Produkt ist nicht verfügbar |