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RSQ020N03TR

RSQ020N03TR ROHM Semiconductor

rsq020n03tr-e.pdf Hersteller: ROHM Semiconductor
MOSFET Med Pwr, Sw MOSFET N Chan, 30V, 2A
auf Bestellung 1973 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
39+ 1.35 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
3000+ 0.59 EUR
6000+ 0.56 EUR
Mindestbestellmenge: 35
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Technische Details RSQ020N03TR ROHM Semiconductor

Description: MOSFET N-CH 30V 2A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V.

Weitere Produktangebote RSQ020N03TR nach Preis ab 0.66 EUR bis 1.53 EUR

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Preis ohne MwSt
RSQ020N03TR RSQ020N03TR Hersteller : Rohm Semiconductor rsq020n03tr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 2458 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
RSQ020N03TR RSQ020N03TR Hersteller : Rohm Semiconductor rsq020n03tr-e.pdf Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
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