RSR015P03TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details RSR015P03TL Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: TSMT3, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSR015P03TL nach Preis ab 0.55 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RSR015P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TSMT3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: TSMT3 Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-96 |
auf Bestellung 4997 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| RSR015P03 TL | ROHM | SOT23 |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RSR015P03TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
auf Bestellung 4997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 20+ | 1.09 EUR |
| 50+ | 0.8 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| RSR015P03 TL |
Hersteller: ROHM
SOT23
SOT23
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)