RSS090N03FRATB ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.59 EUR |
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Technische Details RSS090N03FRATB ROHM Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote RSS090N03FRATB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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RSS090N03FRATB | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 9A 8SOPQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RSS090N03FRATB | Rohm Semiconductor |
Description: MOSFET N-CH 30V 9A 8SOP Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RSS090N03FRATB | ROHM |
Description: ROHM - RSS090N03FRATB - Leistungs-MOSFET, n-Kanal, 30 V, 9 A, 0.011 ohm, SOP, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 9 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2 Bauform - Transistor: SOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.011 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: Lead (08-Jul-2021) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RSS090N03FRATB |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RSS090N03FRATB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 9A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS090N03FRATB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSS090N03FRATB |
|
Hersteller: ROHM
Description: ROHM - RSS090N03FRATB - Leistungs-MOSFET, n-Kanal, 30 V, 9 A, 0.011 ohm, SOP, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Bauform - Transistor: SOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.011
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: Lead (08-Jul-2021)
Description: ROHM - RSS090N03FRATB - Leistungs-MOSFET, n-Kanal, 30 V, 9 A, 0.011 ohm, SOP, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Bauform - Transistor: SOP
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.011
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: Lead (08-Jul-2021)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH