| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.51 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.92 EUR |
| 2500+ | 1.82 EUR |
| 5000+ | 1.78 EUR |
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Technische Details RSS130N03HZGTB ROHM Semiconductor
Description: NCH 30V 13A AUTOMOTIVE POWER MOS, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSS130N03HZGTB nach Preis ab 1.83 EUR bis 5.51 EUR
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RSS130N03HZGTB | Rohm Semiconductor |
 Description: NCH 30V 13A AUTOMOTIVE POWER MOSPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2198 Stücke: Lieferzeit 10-14 Tag (e) |
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RSS130N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 30V; 13A; 2W; SOP8; automotive industry Power dissipation: 2W Gate charge: 25nC Drain current: 13A Kind of channel: enhancement Drain-source voltage: 30V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOP8 On-state resistance: 8.3mΩ Mounting: SMD |
auf Bestellung 1858 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 76 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RSS130N03HZGTB |
|
Hersteller: Rohm Semiconductor
Description: NCH 30V 13A AUTOMOTIVE POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Qualification: AEC-Q101
Description: NCH 30V 13A AUTOMOTIVE POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.83 EUR |
| RSS130N03HZGTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 13A; 2W; SOP8; automotive industry
Power dissipation: 2W
Gate charge: 25nC
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOP8
On-state resistance: 8.3mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 30V; 13A; 2W; SOP8; automotive industry
Power dissipation: 2W
Gate charge: 25nC
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOP8
On-state resistance: 8.3mΩ
Mounting: SMD
auf Bestellung 1858 Stücke:
Lieferzeit 14-21 Tag (e)