RU1C001UNTCL Rohm Semiconductor
auf Bestellung 23465 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3847+ | 0.041 EUR |
| 4167+ | 0.036 EUR |
| 4311+ | 0.034 EUR |
| 6000+ | 0.031 EUR |
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Technische Details RU1C001UNTCL Rohm Semiconductor
Description: MOSFET N-CH 20V 100MA UMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: UMT3F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V.
Weitere Produktangebote RU1C001UNTCL nach Preis ab 0.076 EUR bis 0.66 EUR
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RU1C001UNTCL | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R |
auf Bestellung 2118 Stücke: Lieferzeit 14-21 Tag (e) |
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RU1C001UNTCL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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RU1C001UNTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 100MA UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: UMT3F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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RU1C001UNTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 100MA UMT3F Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: UMT3F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V |
auf Bestellung 31198 Stücke: Lieferzeit 10-14 Tag (e) |
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RU1C001UNTCL | Hersteller : ROHM Semiconductor |
MOSFET 1.2V N-CHANNEL DRIVE |
auf Bestellung 16402 Stücke: Lieferzeit 10-14 Tag (e) |
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| RU1C001UNTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.1A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±8V On-state resistance: 5.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RU1C001UNTCL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100mA; Idm: 0.4A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.1A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SOT323F Gate-source voltage: ±8V On-state resistance: 5.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |