RUF020N02TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 15000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
| 75000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RUF020N02TL Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 320mW (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RUF020N02TL nach Preis ab 0.23 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RUF020N02TL | ROHM Semiconductor |
MOSFET Trans MOSFET N-CH 20V 2A |
auf Bestellung 6841 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
RUF020N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2A TUMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TUMT3 |
auf Bestellung 86313 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| RUF020N02TL |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RUF020N02TL |
|
Hersteller: ROHM Semiconductor
MOSFET Trans MOSFET N-CH 20V 2A
MOSFET Trans MOSFET N-CH 20V 2A
auf Bestellung 6841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.23 EUR |
| RUF020N02TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
Description: MOSFET N-CH 20V 2A TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
auf Bestellung 86313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.3 EUR |
| RUF020N02TL |
|
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)