RUF025N02TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.54 EUR |
| 6000+ | 0.51 EUR |
| 9000+ | 0.48 EUR |
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Technische Details RUF025N02TL Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V.
Weitere Produktangebote RUF025N02TL nach Preis ab 0.5 EUR bis 1.45 EUR
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RUF025N02TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
auf Bestellung 19828 Stücke: Lieferzeit 21-28 Tag (e) |
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RUF025N02TL | Hersteller : ROHM Semiconductor |
MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A |
auf Bestellung 20271 Stücke: Lieferzeit 14-28 Tag (e) |
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| RUF025N02TL |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RUF025N02TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 5A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±10V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RUF025N02TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 5A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±10V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |