Technische Details RUM003N02T2L Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Not For New Designs, Supplier Device Package: VMT3, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote RUM003N02T2L nach Preis ab 0.36 EUR bis 0.86 EUR
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RUM003N02T2L | Rohm Semiconductor |
 Description: MOSFET N-CH 20V 300MA VMT3Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Not For New Designs Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 194 Stücke: Lieferzeit 10-14 Tag (e) |
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RUM003N02T2L | ROHM Semiconductor |
MOSFET Small Signal Single N-CH 20V .3A .15W |
auf Bestellung 6350 Stücke: Lieferzeit 10-14 Tag (e) |
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| RUM003N02T2L |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| RUM003N02 T2L | ROHM | SOT23/SOT323 |
auf Bestellung 4094 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RUM003N02T2L |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.45 EUR |
| RUM003N02T2L |
|
Hersteller: ROHM Semiconductor
MOSFET Small Signal Single N-CH 20V .3A .15W
MOSFET Small Signal Single N-CH 20V .3A .15W
auf Bestellung 6350 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| RUM003N02T2L |
|
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| RUM003N02 T2L |
Hersteller: ROHM
SOT23/SOT323
SOT23/SOT323
auf Bestellung 4094 Stücke:
Lieferzeit 21-28 Tag (e)