
RUM003N02T2L Rohm Semiconductor

Description: MOSFET N-CH 20V 300MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
25+ | 0.70 EUR |
32+ | 0.56 EUR |
100+ | 0.38 EUR |
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Technische Details RUM003N02T2L Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V.
Weitere Produktangebote RUM003N02T2L nach Preis ab 0.30 EUR bis 0.72 EUR
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RUM003N02T2L | Hersteller : ROHM Semiconductor |
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auf Bestellung 6350 Stücke: Lieferzeit 10-14 Tag (e) |
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RUM003N02T2L |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RUM003N02 T2L | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 4094 Stücke: Lieferzeit 21-28 Tag (e) |
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RUM003N02T2L | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
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