RUQ050N02HZGTR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.54 EUR |
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Technische Details RUQ050N02HZGTR Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RUQ050N02HZGTR nach Preis ab 0.52 EUR bis 1.46 EUR
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RUQ050N02HZGTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3969 Stücke: Lieferzeit 10-14 Tag (e) |
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RUQ050N02HZGTR | Hersteller : ROHM Semiconductor |
MOSFET Automotive Nch 20V 5A Small Signal MOSFET. RUQ050N02HZG is a MOSFET with low on - resistance, suitable for switching. |
auf Bestellung 4022 Stücke: Lieferzeit 10-14 Tag (e) |
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