RV2C001ZPT2L Rohm Semiconductor

Description: MOSFET P-CH 20V 100MA DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: VML1006, Vgs(th) (Max) @ Id: 1V @ 100µA, Power Dissipation (Max): 100mW (Ta), Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).