RVQ040N05TR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
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Technische Details RVQ040N05TR Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): 21V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V.
Weitere Produktangebote RVQ040N05TR nach Preis ab 0.39 EUR bis 1.76 EUR
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RVQ040N05TR | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 45V 4A 6-Pin TSMT T/R |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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RVQ040N05TR | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 45V 4A 6-Pin TSMT T/R |
auf Bestellung 5062 Stücke: Lieferzeit 14-21 Tag (e) |
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RVQ040N05TR | Hersteller : ROHM Semiconductor |
MOSFETs Med Pwr, Sw MOSFET N Chan, 45V, 4A |
auf Bestellung 1953 Stücke: Lieferzeit 10-14 Tag (e) |
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RVQ040N05TR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 4A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 21V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V |
auf Bestellung 4328 Stücke: Lieferzeit 10-14 Tag (e) |
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| RVQ040N05TR | Hersteller : ROHM |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RVQ040N05TR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
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