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RW1A025APT2CR

RW1A025APT2CR Rohm Semiconductor

datasheet?p=RW1A025AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
57+0.31 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 39
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Technische Details RW1A025APT2CR Rohm Semiconductor

Description: MOSFET P-CH 12V 2.5A WEMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-WEMT, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V.

Weitere Produktangebote RW1A025APT2CR nach Preis ab 0.14 EUR bis 0.70 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RW1A025APT2CR RW1A025APT2CR Hersteller : ROHM Semiconductor datasheet?p=RW1A025AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 1.5V Drive Pch MOSFET
auf Bestellung 3644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.70 EUR
10+0.52 EUR
100+0.32 EUR
500+0.23 EUR
1000+0.18 EUR
5000+0.15 EUR
8000+0.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
RW1A025APT2CR RW1A025APT2CR Hersteller : Rohm Semiconductor datasheet?p=RW1A025AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 2.5A WEMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
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Im Einkaufswagen  Stück im Wert von  UAH