RW1C015UNT2R Rohm Semiconductor
auf Bestellung 7106 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 397+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.30 EUR |
| 5000+ | 0.28 EUR |
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Technische Details RW1C015UNT2R Rohm Semiconductor
Description: MOSFET N-CH 20V 1.5A 6WEMT, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-WEMT, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V.
Weitere Produktangebote RW1C015UNT2R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RW1C015UNT2R | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 20V 1.5A 6WEMTPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
Produkt ist nicht verfügbar |
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RW1C015UNT2R | Hersteller : ROHM Semiconductor |
MOSFET Trans MOSFET N-CH 20V 1.5A |
Produkt ist nicht verfügbar |