RW1E025RPT2CR

Description: MOSFET P-CH 30V 2.5A 6WEMT, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 6-WEMT, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).