Technische Details RW1E025RPT2CR ROHM Semiconductor
Description: MOSFET P-CH 30V 2.5A 6WEMT, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 6-WEMT, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RW1E025RPT2CR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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RW1E025RPT2CR | Rohm Semiconductor |
 Description: MOSFET P-CH 30V 2.5A 6WEMTVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 6-WEMT Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
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RW1E025RPT2CR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A 6WEMT Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 6-WEMT Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RW1E025RPT2CR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A 6WEMT
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET P-CH 30V 2.5A 6WEMT
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RW1E025RPT2CR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 2.5A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH