RX3G18BBGC16 ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFET RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.
auf Bestellung 1864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.04 EUR |
| 10+ | 10.31 EUR |
| 25+ | 9.35 EUR |
| 100+ | 8.59 EUR |
| 250+ | 8.08 EUR |
| 500+ | 7.78 EUR |
| 1000+ | 6.6 EUR |
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Technische Details RX3G18BBGC16 ROHM Semiconductor
Description: NCH 40V 180A, TO-220AB, POWER MO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.47mOhm @ 90A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V.
Weitere Produktangebote RX3G18BBGC16 nach Preis ab 7.63 EUR bis 12.11 EUR
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RX3G18BBGC16 | Hersteller : Rohm Semiconductor |
Description: NCH 40V 180A, TO-220AB, POWER MO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.47mOhm @ 90A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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