RX3N10BBHC16 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NCH 80V 225A, TO-220AB, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 189W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 40 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.77 EUR |
| 50+ | 5.78 EUR |
| 100+ | 5.3 EUR |
| 500+ | 4.46 EUR |
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Technische Details RX3N10BBHC16 Rohm Semiconductor
Description: NCH 80V 225A, TO-220AB, POWER MO, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V, Power Dissipation (Max): 189W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 40 V.
Weitere Produktangebote RX3N10BBHC16 nach Preis ab 5.68 EUR bis 10.93 EUR
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RX3N10BBHC16 | Hersteller : ROHM Semiconductor |
MOSFETs TO220 N-CH 80V 225A |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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