| Anzahl | Preis |
|---|---|
| 3+ | 1.23 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.47 EUR |
| 9000+ | 0.44 EUR |
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Technische Details RXL035N03TCR ROHM Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 910mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RXL035N03TCR nach Preis ab 0.57 EUR bis 1.67 EUR
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RXL035N03TCR | Rohm Semiconductor |
 Description: NCH 30V 3..5A SMALL SIGNAL MOSFEGate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 910mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RXL035N03TCR |
|
Hersteller: Rohm Semiconductor
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: NCH 30V 3..5A SMALL SIGNAL MOSFE
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 910mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |