auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 10+ | 0.28 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.08 EUR |
| 9000+ | 0.06 EUR |
| 24000+ | 0.06 EUR |
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Technische Details RYE002N05TCL ROHM Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: EMT3, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V.
Weitere Produktangebote RYE002N05TCL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RYE002N05TCL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 50V 200MA EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
Produkt ist nicht verfügbar |
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RYE002N05TCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
Produkt ist nicht verfügbar |