RYE002N05TCL Rohm Semiconductor

Description: MOSFET N-CH 50V 200MA EMT3, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V, Supplier Device Package: EMT3, Vgs(th) (Max) @ Id: 800mV @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).