| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
Produktrezensionen
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Technische Details RZF013P01TL ROHM Semiconductor
Description: MOSFET P-CH 12V 1.3A TUMT3, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RZF013P01TL nach Preis ab 0.29 EUR bis 1.11 EUR
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RZF013P01TL | Rohm Semiconductor |
 Description: MOSFET P-CH 12V 1.3A TUMT3Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 800mW (Ta) |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZF013P01TL |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RZF013P01TL |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A TUMT3
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Description: MOSFET P-CH 12V 1.3A TUMT3
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.11 EUR |
| 31+ | 0.68 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| RZF013P01TL |
|
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)