RZF013P01TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 12V 1.3A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
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Technische Details RZF013P01TL Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V.
Weitere Produktangebote RZF013P01TL nach Preis ab 0.2 EUR bis 0.67 EUR
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RZF013P01TL | Hersteller : ROHM Semiconductor |
MOSFET 1.5V Drive Pch MOSFET |
auf Bestellung 2643 Stücke: Lieferzeit 10-14 Tag (e) |
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RZF013P01TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 12V 1.3A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V |
auf Bestellung 4924 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RZF013P01TL | Hersteller : ROHM SEMICONDUCTOR |
RZF013P01TL SMD P channel transistors |
Produkt ist nicht verfügbar |