S10MC R7G Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details S10MC R7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Weitere Produktangebote S10MC R7G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
S10MC R7G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214ABCurrent - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
|
|
|
S10MC R7G | Hersteller : Taiwan Semiconductor |
Rectifiers 10A, 1000V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |
