S1B-E3/5AT Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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Technische Details S1B-E3/5AT Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Weitere Produktangebote S1B-E3/5AT nach Preis ab 0.055 EUR bis 0.53 EUR
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S1B-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO214AC Current - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 52836 Stücke: Lieferzeit 10-14 Tag (e) |
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S1B-E3/5AT | Vishay General Semiconductor |
Rectifiers 1.0 Amp 100 Volt 40A IFSM @ 8.3ms |
auf Bestellung 14174 Stücke: Lieferzeit 10-14 Tag (e) |
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| S1B-E3/5AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 52836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 63+ | 0.28 EUR |
| 128+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.08 EUR |
| 2000+ | 0.069 EUR |
| S1B-E3/5AT |
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Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 100 Volt 40A IFSM @ 8.3ms
Rectifiers 1.0 Amp 100 Volt 40A IFSM @ 8.3ms
auf Bestellung 14174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.53 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.095 EUR |
| 5000+ | 0.07 EUR |
| 7500+ | 0.055 EUR |