S1DB-13-F Diodes Incorporated
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1650000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.098 EUR |
9000+ | 0.081 EUR |
30000+ | 0.08 EUR |
75000+ | 0.072 EUR |
150000+ | 0.062 EUR |
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Technische Details S1DB-13-F Diodes Incorporated
Description: DIODE GEN PURP 200V 1A SMB, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMB, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote S1DB-13-F nach Preis ab 0.056 EUR bis 0.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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S1DB-13-F | Hersteller : DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 1.8µs Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated Mounting: SMD Case: SMB Capacitance: 10pF Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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S1DB-13-F | Hersteller : DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; SMB; Ufmax: 1.1V; Ifsm: 30A Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 1.8µs Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated Mounting: SMD Case: SMB Capacitance: 10pF |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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S1DB-13-F | Hersteller : Diodes Incorporated | Rectifiers 200V 1A |
auf Bestellung 70311 Stücke: Lieferzeit 10-14 Tag (e) |
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S1DB-13-F | Hersteller : Diodes Incorporated |
Description: DIODE GEN PURP 200V 1A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 1653109 Stücke: Lieferzeit 10-14 Tag (e) |
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