Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > S1FLG-GS08
S1FLG-GS08

S1FLG-GS08 Vishay General Semiconductor - Diodes Division

s1flbdgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.067 EUR
9000+0.064 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details S1FLG-GS08 Vishay General Semiconductor - Diodes Division

Description: DIODE GP 400V 700MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 700mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.

Weitere Produktangebote S1FLG-GS08 nach Preis ab 0.067 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S1FLG-GS08 S1FLG-GS08 Vishay Semiconductors s1flbdgjkm.pdf Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
auf Bestellung 26754 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.56 EUR
10+0.39 EUR
100+0.16 EUR
1000+0.12 EUR
2500+0.083 EUR
60000+0.067 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
S1FLG-GS08 S1FLG-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+0.39 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Hersteller: Vishay Semiconductors
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
auf Bestellung 26754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.39 EUR
100+0.16 EUR
1000+0.12 EUR
2500+0.083 EUR
60000+0.067 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.12 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH