Produkte > VISHAY SEMICONDUCTORS > S1FLK-M-08

S1FLK-M-08 Vishay Semiconductors

Name: S1FLK-M-08
Brand: Vishay Semiconductors
SKU: 54763-4
Price: 3.2 EUR
Availability: InStock

Hersteller: Vishay Semiconductors
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3M

auf Bestellung 5750 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
8+	0.40 EUR
100+	0.34 EUR
500+	0.25 EUR
1000+	0.18 EUR
2500+	0.15 EUR
5000+	0.14 EUR
10000+	0.08 EUR

Mindestbestellmenge: 8

Im Einkaufswagen Stück im Wert von UAH

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Technische Details S1FLK-M-08 Vishay Semiconductors

Description: DIODE GP 800V 700MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 700mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.

Weitere Produktangebote S1FLK-M-08

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	S1FLK-M-08	Hersteller : Vishay General Semiconductor - Diodes Division	Description: DIODE GP 800V 700MA DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
	S1FLK-M-08	Hersteller : Vishay General Semiconductor - Diodes Division	Description: DIODE GP 800V 700MA DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH