Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > S1FLM-GS18
S1FLM-GS18

S1FLM-GS18 Vishay General Semiconductor - Diodes Division

s1flbdgjkm.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10000+0.086 EUR
20000+0.079 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details S1FLM-GS18 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1KV 700MA DO219AB, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 700mA, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote S1FLM-GS18 nach Preis ab 0.084 EUR bis 0.55 EUR

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S1FLM-GS18 S1FLM-GS18 Vishay Semiconductors s1flbdgjkm.pdf Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
auf Bestellung 49812 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.37 EUR
12+0.25 EUR
100+0.15 EUR
500+0.13 EUR
1000+0.1 EUR
5000+0.092 EUR
10000+0.084 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1FLM-GS18 S1FLM-GS18 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 46899 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.096 EUR
5000+0.092 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1FLM-GS18 s1flbdgjkm.pdf
S1FLM-GS18
Hersteller: Vishay Semiconductors
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
auf Bestellung 49812 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+0.37 EUR
12+0.25 EUR
100+0.15 EUR
500+0.13 EUR
1000+0.1 EUR
5000+0.092 EUR
10000+0.084 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1FLM-GS18 s1flbdgjkm.pdf
S1FLM-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 46899 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.096 EUR
5000+0.092 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH