S1GHE3_A/H Vishay General Semiconductor - Diodes Division


s1.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+0.094 EUR
Mindestbestellmenge: 1800 Stücke
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Technische Details S1GHE3_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 400V 1A DO214AC, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).

Weitere Produktangebote S1GHE3_A/H nach Preis ab 0.076 EUR bis 0.42 EUR

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S1GHE3_A/H S1GHE3_A/H Vishay General Semiconductor s1.pdf Rectifiers 1.0 Amp 400 Volt 40A IFSM @ 8.3ms
auf Bestellung 7711 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.3 EUR
15+0.2 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.076 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1GHE3_A/H S1GHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4046 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
63+0.28 EUR
101+0.18 EUR
500+0.15 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1GHE3_A/H s1.pdf
Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 400 Volt 40A IFSM @ 8.3ms
auf Bestellung 7711 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+0.3 EUR
15+0.2 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.076 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S1GHE3_A/H s1.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4046 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
63+0.28 EUR
101+0.18 EUR
500+0.15 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH