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S1GM Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 36+ | 0.6 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
| 5000+ | 0.19 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
29 Stücke
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Technische Details S1GM Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: Micro SMA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 780 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote S1GM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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S1GM | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A MICRO SMA Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: Micro SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 780 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| S1GM |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 780 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH