S1J-K R3G Taiwan Semiconductor
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.15 EUR |
| 1000+ | 0.09 EUR |
| 1800+ | 0.076 EUR |
| 9000+ | 0.058 EUR |
| 48600+ | 0.051 EUR |
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Technische Details S1J-K R3G Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AC (SMA).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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S1J-KR3G | Hersteller : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 600V 1A DO214ACCurrent - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AC (SMA) |
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