S1JLSH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1.2A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.075 EUR |
| 30000+ | 0.074 EUR |
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Technische Details S1JLSH Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123HE, Current - Average Rectified (Io): 1.2A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123H, Packaging: Tape & Reel (TR).
Weitere Produktangebote S1JLSH nach Preis ab 0.091 EUR bis 0.58 EUR
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S1JLSH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 1.2A SOD123HE Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123HE Current - Average Rectified (Io): 1.2A Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123H Packaging: Cut Tape (CT) |
auf Bestellung 48650 Stücke: Lieferzeit 10-14 Tag (e) |
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