S1K-E3/5AT Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Technische Details S1K-E3/5AT Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8 µs, Technology: Standard, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote S1K-E3/5AT nach Preis ab 0.053 EUR bis 0.58 EUR
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S1K-E3/5AT | Vishay General Semiconductor |
Rectifiers 1.0 Amp 800 Volt 30A IFSM @ 8.3ms |
auf Bestellung 2095 Stücke: Lieferzeit 10-14 Tag (e) |
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S1K-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 12100 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 105000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| S1K-E3/5AT |
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Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 800 Volt 30A IFSM @ 8.3ms
Rectifiers 1.0 Amp 800 Volt 30A IFSM @ 8.3ms
auf Bestellung 2095 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 0.21 EUR |
| 25+ | 0.11 EUR |
| 100+ | 0.099 EUR |
| 500+ | 0.095 EUR |
| 1000+ | 0.092 EUR |
| 2500+ | 0.086 EUR |
| 5000+ | 0.053 EUR |
| S1K-E3/5AT |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 12100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 45+ | 0.4 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.097 EUR |
| S1K-E3/5AT |
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auf Bestellung 105000 Stücke:
Lieferzeit 21-28 Tag (e)