S1MLSHRVG Taiwan Semiconductor
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Technische Details S1MLSHRVG Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 1.2A SOD123HE, Packaging: Tape & Reel (TR), Package / Case: SOD-123H, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1.2A, Supplier Device Package: SOD-123HE, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote S1MLSHRVG
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S1MLSHRVG | Hersteller : Taiwan Semiconductor |
 Diode Switching 1KV 1.2A Automotive 2-Pin SOD-123HE T/R |
Produkt ist nicht verfügbar |
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S1MLSHRVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1.2A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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S1MLSHRVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1.2A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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S1MLSHRVG | Hersteller : Taiwan Semiconductor |
Rectifiers 1A, 1000V, GLASS PASSIVATED RECOVERY |
Produkt ist nicht verfügbar |