S1PKHM3/84A Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 7+ | 0.44 EUR |
| 10+ | 0.3 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 3000+ | 0.11 EUR |
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Technische Details S1PKHM3/84A Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO220AA, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-220AA (SMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote S1PKHM3/84A nach Preis ab 0.15 EUR bis 0.62 EUR
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S1PKHM3/84A | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Qualification: AEC-Q101 |
auf Bestellung 2769 Stücke: Lieferzeit 10-14 Tag (e) |
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| S1PKHM3/84A |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 2769 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.15 EUR |