S29GL01GT11DHIV23 Infineon Technologies
Hersteller: Infineon TechnologiesNOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA T/R
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Technische Details S29GL01GT11DHIV23 Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA, Packaging: Tape & Reel (TR), Package / Case: 64-LBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 64-FBGA (9x9), Part Status: Active, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 110 ns, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote S29GL01GT11DHIV23
| Foto | Bezeichnung | Hersteller | Beschreibung |
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S29GL01GT11DHIV23 | Hersteller : Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| S29GL01GT11DHIV23 | Hersteller : Cypress Semiconductor |
NOR Flash NOR |
Produkt ist nicht verfügbar |
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| S29GL01GT11DHIV23 | Hersteller : INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
Produkt ist nicht verfügbar |
