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S29GL256S11TFV010

S29GL256S11TFV010 Infineon Technologies


Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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Technische Details S29GL256S11TFV010 Infineon Technologies

Description: IC FLASH 256MBIT PARALLEL 56TSOP, Packaging: Tray, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 56-TSOP, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 110 ns, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.

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S29GL256S11TFV010 Hersteller : Cypress Semiconductor 001-98285_1_GBIT_128_MBYTE_512_MBIT_64_MBYTE_256_M-1102589.pdf NOR Flash Nor
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