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S29GL512S11TFB010

S29GL512S11TFB010 Infineon Technologies


infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Memory Organization: 32M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
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Technische Details S29GL512S11TFB010 Infineon Technologies

Description: IC FLASH 512MBIT PARALLEL 56TSOP, Memory Organization: 32M x 16, Access Time: 110 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 60ns, Part Status: Active, Supplier Device Package: 56-TSOP, Memory Format: FLASH, Technology: FLASH - NOR, Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 105°C (TA), Memory Type: Non-Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Packaging: Tray, Qualification: AEC-Q100, Grade: Automotive, DigiKey Programmable: Not Verified.

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S29GL512S11TFB010 S29GL512S11TFB010 Hersteller : Cypress Semiconductor 001-98285_1_GBIT_128_MBYTE_512_MBIT_64_MBYTE_256_M-1102589.pdf NOR Flash Nor
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