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S29GL512S11TFB010

S29GL512S11TFB010 Infineon Technologies


b_gl-s_mirrorbit_tm_flash_parallel_3-datasheet-v20_00-en.pdf Hersteller: Infineon Technologies
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns Automotive AEC-Q100 56-Pin TSOP Tray
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Technische Details S29GL512S11TFB010 Infineon Technologies

Description: IC FLASH 512MBIT PARALLEL 56TSOP, Packaging: Tray, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 56-TSOP, Part Status: Active, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 110 ns, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.

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S29GL512S11TFB010 S29GL512S11TFB010 Hersteller : Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S29GL512S11TFB010 S29GL512S11TFB010 Hersteller : Cypress Semiconductor 001-98285_1_GBIT_128_MBYTE_512_MBIT_64_MBYTE_256_M-1102589.pdf NOR Flash Nor
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