S2M0120120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 30+ | 2.39 EUR |
| 32+ | 2.26 EUR |
| 600+ | 2.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S2M0120120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 15A, Pulsed drain current: 66A, Power dissipation: 156W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 212mΩ, Mounting: SMD, Gate charge: 29.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0120120T nach Preis ab 2.26 EUR bis 4.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S2M0120120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 156W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 29.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
 |
S2M0120120T | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|||||||||
|
|
S2M0120120T | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |