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S3A-E3/9AT

S3A-E3/9AT Vishay General Semiconductor

s3a.pdf Hersteller: Vishay General Semiconductor
Rectifiers 3.0 Amp 50 Volt 100 Amp IFSM
auf Bestellung 1756 Stücke:
Lieferzeit 10-14 Tag (e)
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3+1.04 EUR
10+0.64 EUR
100+0.43 EUR
500+0.31 EUR
1000+0.27 EUR
3500+0.17 EUR
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Technische Details S3A-E3/9AT Vishay General Semiconductor

Description: DIODE GEN PURP 50V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.

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S3A-E3/9AT S3A-E3/9AT Hersteller : Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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