S3D08065E

S3D08065E SMC Diode Solutions


S3D08065A%20S3D08065E%20S3D08065G%20N2425%20REV.C.pdf Hersteller: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 661pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 100 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.86 EUR
10+ 4.36 EUR
100+ 3.57 EUR
Mindestbestellmenge: 4
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Technische Details S3D08065E SMC Diode Solutions

Description: DIODE SIL CARBIDE 650V 23A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 661pF @ 0V, 1MHz, Current - Average Rectified (Io): 23A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 51 µA @ 650 V.

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S3D08065E S3D08065E Hersteller : SMC Diode Solutions S3D08065A%20S3D08065E%20S3D08065G%20N2425%20REV.C.pdf Description: DIODE SIL CARBIDE 650V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 661pF @ 0V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
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