.jpg "S3D08065G")
S3D08065G SMC Diode Solutions
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARB 650V 23A TO263-2
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 23A
Capacitance @ Vr, F: 661pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 10+ | 4.65 EUR |
| 100+ | 3.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S3D08065G SMC Diode Solutions
Description: DIODE SIL CARB 650V 23A TO263-2, Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 51 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263-2, Current - Average Rectified (Io): 23A, Capacitance @ Vr, F: 661pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io).
Weitere Produktangebote S3D08065G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
S3D08065G | SMC Diode Solutions |
Description: DIODE SIL CARB 650V 23A TO263-2 Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 51 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 23A Capacitance @ Vr, F: 661pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| S3D08065G |
|
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARB 650V 23A TO263-2
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 23A
Capacitance @ Vr, F: 661pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Description: DIODE SIL CARB 650V 23A TO263-2
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 23A
Capacitance @ Vr, F: 661pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH