S3D08065L SMC Diode Solutions

Description: DIODE SIL CARBIDE 650V 24A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 4.95 EUR |
10+ | 4.45 EUR |
100+ | 3.58 EUR |
500+ | 2.94 EUR |
1000+ | 2.44 EUR |
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Technische Details S3D08065L SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 24A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 650pF @ 0V, 1MHz, Current - Average Rectified (Io): 24A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote S3D08065L
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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S3D08065L | Hersteller : SMC Diode Solutions |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 650pF @ 0V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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