S3D15065I SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220ISO; Ufmax: 2V
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 15µA
Load current: 15A
Power dissipation: 116W
Max. forward impulse current: 102A
Max. forward voltage: 2V
Max. load current: 42A
Max. off-state voltage: 650V
Case: TO220ISO
Kind of package: tube
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 21+ | 3.5 EUR |
| 50+ | 2.89 EUR |
| 100+ | 2.66 EUR |
| 250+ | 2.62 EUR |
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Technische Details S3D15065I SMC DIODE SOLUTIONS
Description: DIODE SCHOTTKY SILICON CARBIDE S, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1243pF @ 0V, 1MHz, Current - Average Rectified (Io): 42A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A, Current - Reverse Leakage @ Vr: 15 µA @ 650 V.
Weitere Produktangebote S3D15065I nach Preis ab 3.5 EUR bis 5.22 EUR
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S3D15065I | Hersteller : SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220ISO; Ufmax: 2V Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 15µA Load current: 15A Power dissipation: 116W Max. forward impulse current: 102A Max. forward voltage: 2V Max. load current: 42A Max. off-state voltage: 650V Case: TO220ISO Kind of package: tube Semiconductor structure: single diode |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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S3D15065I | Hersteller : SMC Diode Solutions |
Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1243pF @ 0V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-Isolation Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 650 V |
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