S3D30065G SMC Diode Solutions
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 84A D2PAK
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 84A
Capacitance @ Vr, F: 2307pF @ 0V, 100MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details S3D30065G SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 84A D2PAK, Current - Reverse Leakage @ Vr: 140 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 84A, Capacitance @ Vr, F: 2307pF @ 0V, 100MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote S3D30065G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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S3D30065G | SMC Diode Solutions |
Description: DIODE SIL CARBIDE 650V 84A D2PAK Current - Reverse Leakage @ Vr: 140 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 84A Capacitance @ Vr, F: 2307pF @ 0V, 100MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S3D30065G |
|
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 84A D2PAK
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 84A
Capacitance @ Vr, F: 2307pF @ 0V, 100MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 84A D2PAK
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 84A
Capacitance @ Vr, F: 2307pF @ 0V, 100MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH