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Technische Details S3HVM10 Semtech
Description: DIODE GEN PURP 10KV 1.2A MODULE, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1 µA @ 10000 V, Voltage - Forward (Vf) (Max) @ If: 11.5 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 10000 V, Operating Temperature - Junction: -55°C ~ 150°C, Current - Average Rectified (Io): 1.2A, Technology: Standard, Reverse Recovery Time (trr): 2.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: Module.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| S3HVM10 | Hersteller : Semtech Corporation |
 Description: DIODE GEN PURP 10KV 1.2A MODULEPackaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 10000 V Voltage - Forward (Vf) (Max) @ If: 11.5 V @ 3 A Voltage - DC Reverse (Vr) (Max): 10000 V Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 1.2A Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: Module |
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