S3JBH Taiwan Semiconductor
auf Bestellung 6000 Stücke:
Lieferzeit 89-103 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.11 EUR |
| 66+ | 0.8 EUR |
| 130+ | 0.4 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.25 EUR |
| 9000+ | 0.22 EUR |
| 24000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S3JBH Taiwan Semiconductor
Description: DIODE GEN PURP 600V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote S3JBH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
S3JBH | Hersteller : Taiwan Semiconductor |
 Diode Switching 600V 3A Automotive 2-Pin SMB T/R |
Produkt ist nicht verfügbar |
|
 |
S3JBH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |