S3M0040120J-A SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 54A, Pulsed drain current: 223A, Power dissipation: 600W, Case: D2PAK-7, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 143nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Application: automotive industry.