S3M0040120J-A SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W, Case: D2PAK-7, Mounting: SMD, Kind of package: tube, Drain-source voltage: 1.2kV, Drain current: 54A, On-state resistance: 50mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 600W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 143nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 223A, Anzahl je Verpackung: 1 Stücke.