S3MHE3_A/I Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.31 EUR |
| 3500+ | 0.27 EUR |
| 7000+ | 0.25 EUR |
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Technische Details S3MHE3_A/I Vishay General Semiconductor
Description: DIODE STANDARD 1000V 3A DO214AB, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Weitere Produktangebote S3MHE3_A/I nach Preis ab 0.3 EUR bis 1.48 EUR
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S3MHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 3A DO214ABGrade: Automotive Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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S3MHE3_A/I | Hersteller : Vishay Semiconductors |
Rectifiers 3A 1000V |
auf Bestellung 4476 Stücke: Lieferzeit 10-14 Tag (e) |
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| S3MHE3_A/I | Hersteller : Vishay |
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auf Bestellung 48979 Stücke: Lieferzeit 21-28 Tag (e) |
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| S3MHE3_A/I | Hersteller : Vishay General Semiconduc |
3A 1000V DO-214AB Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |
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S3MHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 3A DO214ABQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |

